However, most of the current solar cell technologies have one or more of the following issues that, (1) raw materials are not abundantly available (2) toxic materials are used (3) overall cost is high. There is no doubt that solar electricity has attracted a lot of attention in recent years as an alternative and renewable energy source. The broader/commercial impact of this project will be the potential to produce photovoltaic devices based on low-cost and environmentally-friendly materials. In this project, close space sublimation (CSS) technique, a thin film fabrication method proven for low cost and high manufacturability, will be used to synthesize SnS. The properties of SnS, including bandgaps, carrier density and mobility, chemical and thermal stability, and metallurgical properties, promise the possibility to achieve relatively high conversion efficiency given state-of-art process control and device design.

Their project aims to develop photovoltaic devices based on tin (II) sulfide (SnS). Jem Enterprises is a company that received a SBIR Phase I grant for a project entitled: Tin(II) Sulfide Photovoltaics. AMBP Tech Corporation will develop and demonstrate a tool to improve solar cell performance that is immediately applicable in the solar-cell manufacturing marketplace. A truly cost effective technology is to build cells using methods whose thermal budgets are low enough to enable the use of inexpensive polymer substrates, which enables large-area roll-to-roll processing and automated cell-to-cell connection techniques. Solar cell technology is an energy alternative that can reduce America's dependence on fossil-fuel-generated electric power. The proposed ex-situ approach will not need to heat the substrate above the 425C value used to manufacture CIGS solar cells on flexible polyimide substrates. Their project proposes to achieve recently reported gains in CIGS solar cell efficiency from in-situ laser deposition, by using an ex-situ laser annealing approach that is compatible with an existing pilot manufacturing system.

In the photovoltaics arena, the proposed devices have the potential to offer increased efficiencies to make crystalline silicon-based devices competitive with amorphous silicon solutions.Īmbp Technology Corporation is a company that received a SBIR Phase I grant for a project entitled: Photovoltaic Laser Annealing System. The infrared detectors proposed here cover the so-called telecom C-,L-, and U-bands within the wavelength window around 1500 nm, a region of great interest to the telecommunications industry. The fabrication of semiconductor devices on cheap silicon wafers is of great significance because of the potentially enormous cost reductions and the possibility of integrating optoelectronic and microelectronic functions, which further reduces costs and contributes to system miniaturization. Using this technology, it should be possible to build infrared detectors covering a spectral range previously inaccessible to silicon-based detectors, and to build multijunction photovoltaic devices for a more efficient capture of solar photons.

Of particular interest for this project is the ternary alloy Ge1-x-ySixSny, grown for the first time at Arizona State University. These alloys act as infrared materials, and they can also be used as templates for the subsequent growth of other semiconductors on silicon. The new technology to be explored consists in growing optical-quality alloys of tin and germanium (Ge1-ySny) directly on silicon wafers. Their research project aims to demonstrate prototype infrared light detectors and photovoltaic (solar cell) devices based on technology developed at Arizona State University. Silicon Photonics Group is a company that received a STTR Phase I grant for a project entitled: Advanced Si-Ge-Sn-based Photonic Materials and Devices.

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